Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

In this article, we propose a high-frequency model taking into account the series resistance of pseudo-vertical gallium nitride (GaN)-based p-i-n diodes. This model relies on the specific contact ...

1.2kV/2.9mΩ.cm2 Vertical NiO/β-Ga 2 O 3 Heterojunction Diodes with High Switching Performance Abstract: In this study, we developed novel vertical NiO/β −Ga2O3 heterojunction power diodes and ...