This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...

A novel modeling methodology of Schottky diode for microwave rectifier design is proposed in this paper. The challenge was to consider the effective capacitance of the diode under different status ...