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Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm MALVERN, Pa., July 09, ...

Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

New high-voltage Schottky diodes combine ultra-low profile, fast switching, and enhanced insulation for compact, ...

Terahertz radiation (THz), electromagnetic radiation with frequencies ranging between 0.1 and 10 THz, could be leveraged to ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Modern researchers try to bring to life the idea of a scientist who lived more than a hundred years ago. We are talking about Nikola Tesla. In 1891, the inventor developed the Tesla coil, a resonant ...

Hunter Irving] is a talented hacker with a wicked sense of humor, and he has written in to let us know about his latest ...

RIR Power Electronics stock closed at Rs 2744.20 a share, up 3.26% on the BSE, with a market value of Rs 2,105.82 Cr. The ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm ...