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New high-voltage Schottky diodes combine ultra-low profile, fast switching, and enhanced insulation for compact, ...

Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mmMALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today ...

Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

A Schottky diode has a very low voltage drop and fast switching speed. Zener diodes have application in simple voltage regulation. Continue reading “A Diode By Any Other Name ...

For each diode, the analysis is then linked to the corresponding SPICE model. Finally, the power diode losses - both on-state losses and switching losses - are examined in a converter circuit, ...

In hard-switching designs, GaN devices can suffer from higher power losses due to body diode behavior, especially with long controller dead times. CoolGaN G5 transistors address this by integrating a ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...