First Diodes in L-Flat series support current ratings up to 10 Amps while reducing mounting area by 50 percent Toshiba America Electronic Components, Inc. today announced the availability of its ...

Toshiba will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of insulated TO-220F-2L package products.

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of a new line-up of low-capacitance TVS diodes [1] for use in ...

KAWASAKI, Japan, September 25, 2024--Toshiba’s 1200V additions to its lineup of third-generation SiC Schottky barrier diodes contribute to high efficiency industrial power equipment.

With Toshiba, you are guaranteed a top-performing microwave with solid looks and plenty of extra functions packed into a mid-range price. Skip to content FOX31 Denver ...

Toshiba Electronics Devices & Storage Europe has unveiled a new Schottky barrier diode product targeting applications such as rectification and backflow prevention in power supply circuits. The ...