Researchers at the Jülich Research Center and the Leibniz Institute for Innovative Microelectronics (IHP) have developed a ...

Researchers have developed a material that has never existed before: a stable alloy of carbon, silicon, germanium, and tin.

The graph below shows the total number of publications each year in Contact Resistivity and Schottky Barrier Engineering in Semiconductor Devices.

This study aimed to calculate the band gap energy of a germanium semiconductor diode using computational tools. The energy gap calculation was conducted by immersing the semiconductor diode in an oil ...

The PIN diode is a promising device in the field of power electronics due to its lower reverse leakage current and lower capacitance. Power electronics industry searches suitable semiconductors as ...

Learn about and revise electrical circuits, charge, current, power and resistance with GCSE Bitesize Physics.

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