Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

Robust reliability is essential for electronic devices against inductive transient shocks in power switching applications. In this work, rugged surge current tolerance and transient energy sustaining ...

A silicon carbide split-gate MOSFET (SG-MOSFET) is proposed in this paper, which features a Schottky barrier diode embedded above the JFET region between the split gates. Therefore, the proposed ...

Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...