Schottky diodes in 65-nm CMOS have been designed, measured up to 67 GHz, and modeled in the reverse-bias voltage range. An array of 8 × 8 minimum-sized parallel diode junctions is compared with a ...

The choice between Schottky diodes and conventional diodes depends on the design requirements and trade-offs of the circuit. You need to consider factors such as voltage, current, frequency, power ...

In this paper, a D band zero bias detector chip using InGaAs Schottky barrier diode (SBD) is proposed. The Schottky barrier diode with 3.5 THz cut-off frequency and 0.16 eV barrier height is realized ...

Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.

Terahertz radiation (THz), electromagnetic radiation with frequencies ranging between 0.1 and 10 THz, could be leveraged to ...

Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...