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IEEE4d
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode
The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of ...
IEEE4d
On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines - IEEE Xplore
In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This ...
SciELO14d
Vibration energy harvesting using piezoelectric transducer and non-controlled rectifiers circuits - SciELO - Brasil
The curve of the diode 1N5817 It is well known that the schottky and germanium diodes have forward voltage drop significantly lower than silicon diodes. The 1N5817 schottky diode was chosen after ...
Compoundsemiconductor.net25d
Debut for vertical rutile GeO₂ Schottky barrier diode
Reference K. Kanegae et al. Appl. Phys. Express 18 041001 (2025) Pictured above: Forward current-voltage characteristics of the vertical rutile GeO2Schottky barrier diode, showing clear rectification ...