Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

Due to manufacturing variability, each Schottky diode exhibits minor disparities in its responsivity (or detection sensitivity). The diode’s transfer function also demonstrates a degree of ...

Achieves approximately 1.3 times the creepage distance compared to standard products ROHM's New Surface Mount SiC Schottky Barrier Diodes Extends creepage distance to a minimum of 5.1mm ...

In response to this trend, Infineon Technologies has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The ...

Toshiba’s 1200V additions to its lineup of third-generation SiC Schottky barrier diodes contribute to high efficiency industrial power equipment.

schottky diode 4 Articles Almost Making A Camera Sensor From Scratch May 4, 2024 by Jenny List 5 Comments ...

The SiC Schottky diode is a wide bandgap semiconductor device having higher bandgap energy as compared to conventional Si-based Schottky diodes. This makes silicon carbide (SiC) diodes suitable for ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...