Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...

This letter presents a nonlinear model for carbon nanotube (CNT) Schottky diodes, integrating dc, small-signal, and large-signal parameters. A broadband equivalent model, spanning dc to 110 GHz, is ...

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A low voltage analog VLSI circuit model for Hodgkin–Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used ...

This paper uncovers some striking and new complex phenomena in a memristive diode bridge-based Murali–Lakshmanan–Chua (MLC) circuit. These striking dynamical behaviors include the coexistence of ...