Low-voltage enhancement-mode silicon mosfets need to be cascoded with the normally-on depletion-mode SiC JFETs to make a normally-off bi-directional power switch. The device is short-circuit rated for ...

Block diagram of the proposed full-duplex (FD) transceiver (IMAGE) ... (SIC) circuit, the system can reach unprecedented data rates at frequencies over 100 GHz. Credit ...

4. Comparison of intrinsic diode reverse-recovery characteristics. The UJC1210K has the lowest Q RR.. SiC Cascodes in Practice. The near-ideal parameters, combined with small die size, of SiC ...

Differences in the short-circuit behavior of SiC MOSFET and IGBT devices. September 13th, 2021 - By: Zhihui Yuan Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect ...

NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...

Rethinking circuit design for higher efficiency and density in SiC power electronics. In everything from AI data centers to EV battery chargers, power electronics are under more pressure to perform.

ALBANY, N.Y., March 14, 2025 /PRNewswire/ -- NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short ...