Analog designers often need matched resistors. One solution is integrated resistor networks, but what if they don't offer the ...

A clever method from Caltech researchers now makes it possible to unravel complex electron-lattice interactions, potentially transforming how we understand and design quantum and electronic materials.

In contrast to GaN-on-SiC devices, imec is experimenting with GaN-on-Si devices to provide the high solid-state power levels ...

ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.

Everything starts with the design. Engineers review every PCB file carefully, checking trace widths, spacings, and hole sizes ...

Ultra-high voltage SiC devices were used as the switching device in pulsed power circuits. It is hard to realize both high breakdown voltage and fast switching.

This paper presents a temperature-dependent SPICE model of a novel Schottky-type gate GaN-on-AlN/SiC HEMT featuring immunity to back-gating effects. The modeling approach is based on the analytic ...