Block diagram of the proposed full-duplex (FD) transceiver (IMAGE) ... (SIC) circuit, the system can reach unprecedented data rates at frequencies over 100 GHz. Credit ...

4. Comparison of intrinsic diode reverse-recovery characteristics. The UJC1210K has the lowest Q RR.. SiC Cascodes in Practice. The near-ideal parameters, combined with small die size, of SiC ...

Differences in the short-circuit behavior of SiC MOSFET and IGBT devices. September 13th, 2021 - By: Zhihui Yuan Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect ...

NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...

Renesas Electronics Corp. announces the development of a Schottky barrier diode (SBD), the RJS6005TDPP, employing silicon carbide (SiC), a material with great potential for use ...

ALBANY, N.Y., March 14, 2025 /PRNewswire/ -- NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short ...