“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

This paper proposed whole-chip all-directional ESD protection circuit design with RC LIGBT-based 12 V Power clamp and SCR-based 12 V I/O Clamp. The proposed ESD protection circuit is fabricated using ...

Gate Drive Application Notes: IGBT/MOSFET/SiC/GaN gate drive DC-DC converters, Murata Power Solutions Fundamentals of MOSFET and IGBT Gate Driver Circuits, Texas Instruments Application Report ...

Abstract: Power converters composed of SiC mosfets with fast switching transients are widely used in high-performance, high-power applications. Wide bandgap semiconductor devices with high switching ...