These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behaviour that provides an outstanding FoM (QC x VF). Furthermore, ...

During Thursday's trading session, shares of a global pioneer in high-power semiconductor solutions surged nearly 5 percent ...

Nexperia has expanded its bipolar junction transistor (BJTs) portfolio by introducing 12 new MJD-style BJTs in clip-bonded ...

Nexperia has expanded its bipolar junction transistor (BJTs) portfolio by introducing 12 new MJD-style BJTs in clip-bonded ...

Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

Diode-rectifier-based high-voltage direct current (DR-HVDC) systems are considered an attractive solution for integrating offshore wind farms (OWFs). Grid-forming (GFM) control with a rational ...

Abstract: A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between ...