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Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...
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Tech Xplore on MSNImec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImproved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...
Its performance and longevity are underpinned by Menlo Source: Menlo Microsystems, Inc. Micro’s Ideal Switch technology, ...
Rising tensions between Israel and Iran have drawn global focus back to the modernization of defense communications and radar ...
Quantic X-Microwave’s modular design platform enables rapid prototyping and flexible design by allowing engineers to easily ...
Mass production for STMicroelectronics' turnkey Bluetooth/Wi-Fi modules, developed with Qualcomm, is underway.
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
RF and mmWave specialisr Filtronic has launched its latest V-band high-frequency amplifier system, Prometheus, at the ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Revolutionary transistor design enables standard CMOS cost and integration without compromise on performance. SUNNYVALE, Calif., Oct. 28, 2015 – ACCO Semiconductor, a fabless RF front-end component ...
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