Resistive random-access memories (RRAMs) are highly promising for high-density memory and energy-efficient inmemory computing. Towards the integration of RRAM arrays, the sneak path leakage and IR ...

Moreover, it is also revealed that TMD/MLG heterostructures enable new mechanism for improving charge retention, thereby allowing the effective oxide thickness of gate dielectrics to be scaled to a ...

When creating the boundary forcing for the PACMED domain, I run out of memory when using the 2D fill. In a jupyter notebook it crashes the kernel.