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An international research group successfully measured, with a nanometer resolution, the depth of PN junctions varied in a Si wafer in a non-destructive and non-contact manner by observing the THz ...

Moreover, the turn-on voltage of a GaN power FET tends to be higher than the turn-on voltage of a silicon diode, leading to a disadvantage during reverse-conduction operation, according to Infineon.

These tiny regions acted like p-n junctions. But unlike manufactured p-n junctions, these ones form naturally as part of the crystal itself. A boon for quantum and electronic applications Because the ...

Negative photoresponses in photodetectors can find important applications like image AI and image edge detection. In this Letter, we develop a few-layer MoS2 phototransistor photogated by a ...

Scientists at Delft University of Technology (TU Delft) in the Netherlands have designed a rear junction silicon heterojunction (RJ-SHJ) solar cell with a localized front carrier-selective ...

Hosted by Sreekant Narumanchi, join us for a chat with GQ Lu and Zichen Zhang where they discuss the paper: Package Design and Analysis of a 20-kV Double-Sided Silicon Carbide Diode Module With ...

Silicon Valley Wants to Fight Fires With Fire How some high-tech entrepreneurs are trying to use new forms of technology to solve the problem of mega-wildfires in the age of climate change.

In the previous tutorial, we discussed the physical mechanism that determines the increasing trend of the reverse saturation current of a pn junction, as a function of temperature. In this article, we ...