This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

A new terahertz technique reveals nanometer-scale PN junction depths in silicon chips, enabling faster, non-contact ...

SUNNYVALE, Calif., Feb. 7, 2008-- Silicon Image, Inc., a leader in semiconductors for the secure storage, distribution and presentation of high-definition content, today reported financial results for ...

A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and ...

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Nature - Heat Liberation in Alloy-Junction Silicon Diodes. Skip to main content. ... Proposed Distribution of Electron Energy in p–n Junctions and the Theory of Injection ...

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem ...

Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...

Tandem and multijunction solar cells offer the only demonstrated path to terrestrial 1-sun solar cell efficiency over 30%. Three-terminal tandem (3TT) solar cells can overcome some of the limitations ...