This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

A new terahertz technique reveals nanometer-scale PN junction depths in silicon chips, enabling faster, non-contact ...

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With the purpose of detecting the internal defects of monocrystalline silicon, an ultrasonic detection platform has been set up with the method of circle traversal detection combining transmission and ...

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Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...