This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

Minority-carrier lifetime in a forward-biased asymmetrical p-n junction diode can be measured by observing the time response of the diode to a sudden reversing step voltage. An approximate but general ...

Using epitaxial multiple p-n junction structures of 4H-SiC, lateral super junction diodes were fabricated for the first time. The breakdown voltage of the device was 400 V, which is more than 3/spl ...