A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and ...

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We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem ...

Available in 55" (54 6/10-inch diagonal) and 65" (64 ½-inch diagonal) Class sizes, the new PN-M and PN-P models deliver serious upgrades in brightness, reliability, and color clarity.