This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

Abstract: Two different Ka-band single-pole, double-throw (SPDT) switch circuits using monolithic GaAs epitaxial p-i-n diode technology are presented. The lowest insertion loss is 0.7 dB at 35 GHz, ...

The technique can be applied to probe electronic signals or, conversely, to modulate light using controlled electronic signals. Simple demonstrations of each application are presented.

Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.