This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and ...

L. Burgholzer, A.Ploier, and R. Wille, "Exploiting Arbitrary Paths for the Simulation of Quantum Circuits with Decision Diagrams," in Design, Automation and Test in Europe (DATE), 2022; T. Grurl, J.

We propose a 16T5C oxide thin-film transistor (TFT) micro light-emitting diode (μLED) pixel circuit that enables accurate low gray-level expression by employing a sweep generator (SG) that generates a ...