Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz ...

A brief introduction to solid-state physics, leading to discussion of physical characteristics of p-n junction diodes, bipolar junction transistors, and field-effect transistors: active, saturated, ...