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This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...
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Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...
Implanted p-n junction diodes fabricated on the same wafer exhibit avalanche breakdown in reverse bias with a positive temperature coefficient, but the forward current is limited by a series barrier.