Strong demand in the memory market is expected to keep NAND Flash prices at elevated levels in the second half of 2025, ...

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Adding two 1N914 diodes and an AND gate ahead of the inverter create a two-input NAND gate. With the two diodes reversed and a 910 Ohm resistor removed, a NOR gate is created.

SFGATE columnist Drew Magary is sick of the face of CNN using his platform to tell us about year-old news Jake Tapper discusses his new book, “Original Sin,” on May 27, 2025, in New York City ...

Recoverable residual image characteristics for n- and p-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT)-based organic light-emitting diode (OLED) displays using ...

We propose and demonstrate a directed optical logic circuit that can perform the XOR and XNOR logic operations consisting of two cascaded microring resonators, i.e., an upper waveguide and an under ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

A small voltage—about 0.8 volts—exists at the output of the comparators when the output is low. Due to diodes D1 and D2, which form part of the AND gate, the voltage at the junction of the anodes of ...