A planar floating-gate NAND technology has previously realized a 0.87Gb/mm2 memory density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the development of planar NAND ...

This paper presents the design techniques of Gb/s CMOS SCL circuits. Basic SCL functional cells including a 2:1 multiplexer, a D-latch, and XOR/NXOR, AND/NAND, OR/NOR gates are described in detail.