A small-signal equivalent circuit is developed for the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT). Device S-parameters are measured in the 0.05- GHz to 40-GHz range at ...

If transistor switching circuits are to have response times limited by the bandwidths of the transistors operating as amplifiers and by diffusion or transit time delay, it becomes necessary to avoid ...