This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...

The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...