This paper presents an analytical model with 2-D effects for 1200 V 4H-silicon carbide trenched junction barrier Schottky (TJBS) diodes. Energy band diagrams of junction barrier Schottky and TJBS ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Take advantage of current control topologies without self-heating error while retaining the 317/337's fault protection ...

Autozero circuit that allows the user to automatically adjust the zero-point virtual ground terminal of the scope with the ...

The remote variable resistor functions as a voltage-controlled resistor whose resistance changes based on an applied voltage.

The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is ...