The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Take advantage of current control topologies without self-heating error while retaining the 317/337's fault protection ...

The remote variable resistor functions as a voltage-controlled resistor whose resistance changes based on an applied voltage.

A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and ...

Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage ...