When the gate of the FET is charged and discharged, switching power losses (P sw) occur in the form of heat. The formula can approximate this: GaN FETs feature less input capacitance and, therefore, ...

Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical ...

It is shown that in the classical operational amplifier with input stage of dual-input-stage subclass the current error in the high-impedance node is determined ...

We report on the use of a lab-on-CMOS biosensor platform for quantitatively tracking the proliferation of RAW 264.7 murine Balb/c macrophages. We show that macrophage proliferation correlates linearly ...

For efficiency, the performance of digital CMOS gates is often expressed in terms of empirical models. Both delay and short-circuit power dissipation are sometimes characterized as a function of load ...

When applied to pharmaceuticals, the term “off-label” suggests the (frequently discovered) practical and beneficial uses for a drug that are different from the one it was originally developed for.

There have been ongoing efforts to develop solutions to the limitation of CMOS FET technology, including negative capacitance FETs (NC-FETs).

C pd includes both internal parasitic capacitance (e.g., gate-to-source and gate-to-drain capacitance) and through-currents present while a device is switching and both n-channel and p-channel ...

Junction capacitance and common-mode distortion: How protecting your op amps may be spoiling your linearity.