The bistability characteristics of GaN/AlN resonant tunneling diodes (RTDs) grown on a sapphire substrate were investigated. The RTDs exhibit bistability characteristics with high and low resistivity ...

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Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

This paper discusses common difficulties in measuring tunnel diodes and sets a special focus on devices consisting of tunnel diodes and solar cells, such as multijunction solar cells. The resulting ...