Navitas Semiconductor NVTS is actively forging strategic collaborations and partnerships across the power electronics ecosystem, accelerating the adoption of its gallium nitride (GaN) and silicon ...

In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast ...

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In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...