Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high junction temperature (Ti) up to 700 °C have been extracted and analyzed for the first time, by virtue of a ...

SiC MOSFET can operate at a junction temperature of 200-250 °C due to its improved material properties and thermal stability. However, successful realization of SiC MOSFET based high-temperature (HT) ...