We demonstrate a membrane photonic integrated circuit consists of membrane DFB laser and p-i-n photodiodes with buried-ridge-waveguide bonded on Si by a-Si assisted room-temperature surface-activated ...

Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high junction temperature (Ti) up to 700 °C have been extracted and analyzed for the first time, by virtue of a ...