The bolometric effect (BE) allows to electrically monitor spectral characteristics of plasmonic sensors, but trade-off between sensitivity, response time, and strong light absorption is an important ...

We present here 40 nm vertical MOSFETs fabricated using the most standard CMOS process flow. At the expense of four additional (but still conventional) steps, both planar and vertical devices can be ...

The exploitation of electrode materials with high areal capacity and rate performance under high mass loading is critical for the practical application of sodium-ion batteries (SIBs), and 3D ...