Gate loop requirements and recommendations for the gate driver output stage are explained. A flowchart for the design of integrated gate drivers is presented with the boundary constraints from the ...

This paper addresses the problem of turn on performances of an insulated gate bipolar transistor (IGBT) that works in hard switching conditions. The IGBT turn on dynamics with an inductive load is ...

Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, the company has introduced this new IC as the first in a series of isolated gate driver ...

Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class ...

Silanna Semiconductor has released the SL2002, the second breakthrough product in its FirePower family of laser driver ICs. The device has been optimised for low-voltage operation in small-form-factor ...

Isolated Gate Driver IC Optimized for driving 600V-class high-voltage GaN HEMTs Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the ...

Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V ...

Willich-Münchheide, Germany, June 25, 2025 – ROHM has developed an isolated gate driver IC - the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, ...

A gate driver with high CMTI can prevent device damage while reducing the risk of circuit shorts. Attachment Isolated Gate Driver IC CONTACT: Heike Mueller ROHM Semiconductor +1-408-720-1900 ...

Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V ...

ROHM Semiconductor has introduced the BM6GD11BFJ-LB, an isolated gate driver IC developed specifically for driving high-voltage GaN HEMTs. This device enables stable operation under high-speed, ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate driver IC - the BM6GD11BFJ-LB - designed for driving HV-GaN HEMTs. When ...