The GaN-on-Diamond technology will be integrated into a Ka-band (17.2 to 20.2 GHz) 3U radio transmitter and launched in a 12U CubeSat allowing for new levels of data transmission for customers to ...

We know that the figures of merit (FOM) of GaN devices compared to best-in-class silicon-based MOSFETs indicate an improvement in performance of nearly an order of magnitude.

Europe’s first item of high-performance gallium nitride technology to fly in space has completed its second year of operations. Hosted on ESA’s Earth-observing Proba-V minisatellite in 2013 as ...

At EuMW 2022, Fraunhofer IAF will therefore present an energy-efficient GaN-based transmitter module for the 6G-relevant frequency ranges above 70 GHz, which was developed jointly with Fraunhofer HHI.

Near Field Transmitter Enables Fast-Charging of Devices Such as Earbuds, Smartwatches, Enterprise Headsets, Smart Glasses & More SAN JOSE, CA / ACCESSWIRE / July 30, 2019 / Energous Corporation ...

Cobham and South Korea's RFHIC Corp. are teaming up to produce gallium nitride (GaN) radars. The two companies will jointly develop GaN High Power Amplifier (HPA) modules that will be integrated into ...

NXP's new GaN process technology supports towards a "universal transmitter" NXP Semiconductors N.V. is showcasing a live demo of its devices made using Gallium Nitride (GaN) technology at IMS2011 this ...

The contract requires MACOM to develop a 45-Kilowatt Radio Frequency (RF) transmitter using novel Gallium Nitride (GaN) semiconductor and antenna beam forming technology.