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Cree Unveils New Gallium Nitride (GaN) RF MMIC Process Technologies to Enable Lower Cost, Higher Performance Telecommunication and Radar Systems - Business Wire
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to ...
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Wolfspeed CGHV40100 GaN-on-Silicon HEMT Chip and Module Fabrication Process Overview - Research and Markets - Business Wire
The company's new CGHV40100 is a unique gallium-nitride (GaN) high-electron-mobility transistor operating from a 50-volt rail and up to 3-GHz. The CGHV40100 includes a single GaN-on-SiC HEMT die ...