Digging through IMS 2025’s technical sessions unearthed some insights into the microwave industry’s research inclinations, ...

SDS5000X HD and SDS5000L oscilloscopes offer up 8-channels, a bandwidth up to 1 GHz and mark a significant advancement in Siglent’s multi-channel strategy.

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

Caltech scientists have found a fast and efficient way to add up large numbers of Feynman diagrams, the simple drawings ...

N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by ...

Additionally, DB HiTek has successfully developed an 8-inch GaN process with 650V HEMT characteristics and plans to complete reliability validation within the year.

SAN JOSE, Calif., June 24, 2025--QuantumScape Corporation (NYSE: QS), a global leader in next-generation solid-state lithium-metal battery technology, today announced a major milestone in the ...

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Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV. Such structures are of interest because no doped buffer ...

This paper introduces a new method for designing power amplifiers (PAs) using a flexible, automatic approach. It employs a Gaussian process-assisted fast non-dominated sorting genetic algorithm ...