“CGD recognises TSMC’s leadership in high voltage GaN – we believe that they have the most mature and reliable process in the industry, which is why we chose to have our proprietary ICeGaN ...

Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 GaN power device manufacturer in Asia ...

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability s ...

On the other side, GaN on Si HEMT offers news capabilities, such as the possibility to work at higher frequencies and the more and more competitive manufacturing cost.

Taiwan has announced that its domestically developed high-frequency gallium nitride (GaN) 8-inch process demonstrates greater efficiency compared to the technology developed by the Belgium-based Imec.

Kyocera has developed a thin-film process technology for making silicon substrates for GaN-based micro-light sources - light sources with a side measuring ...

Samsung Electronics reportedly will directly migrate to 8-inch process for third-generation semiconductors SiC and GaN devices now under development by its power semiconductor task force set up in ...