Digging through IMS 2025’s technical sessions unearthed some insights into the microwave industry’s research inclinations, ...

We investigate the vertical leakage mechanism in metal-organic chemical vapor deposition-grown carbon (C)-doped AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-in silicon wafer. Substrate ...

This model includes an exact calculation of the emission current through the surface barrier. In particular, the screening effect of surface charges and how the band diagram of the semiconductor is ...

In a study published in the journal Information Systems Research, Texas Tech University's Shuo Yu and his collaborators ...

Caltech scientists have found a fast and efficient way to add up large numbers of Feynman diagrams, the simple drawings ...

The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, ...

Use customizable shapes to craft UML diagrams that visually represent software architecture, business processes, and other complex systems.

Progressive Growing of GANs for Improved Quality, Stability, and Variation - tkarras/progressive_growing_of_gans ...

Contribute to C-S26/GAN_Model development by creating an account on GitHub.