Digging through IMS 2025’s technical sessions unearthed some insights into the microwave industry’s research inclinations, ...

This model includes an exact calculation of the emission current through the surface barrier. In particular, the screening effect of surface charges and how the band diagram of the semiconductor is ...

In this paper we propose a simulation model of 18 nm AlGaN/GaN high electron mobility transistor capable of operating at high voltages and in terahertz regime. The HEMT structure has been designed on ...

In a study published in the journal Information Systems Research, Texas Tech University's Shuo Yu and his collaborators ...

Caltech scientists have found a fast and efficient way to add up large numbers of Feynman diagrams, the simple drawings ...

The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, ...