The transient voltage overshoot of forward biased pn-junction diodes is measured by VF-TLP and compared with TCAD simulations. Based on the simulation results a physics-based analytical model is ...

I–V characteristics of Schottky barrier diodes (SBDs) in low forward bias and reverse bias voltages are critical in low-power and high-speed SBD-based circuits. Accurate modeling of I–V in these ...

PDF for physics from the official Punjab Board website. Access chapter-wise details for physics with the link to download the ...

Researchers from Queen Mary University of London and Paragraf Limited have demonstrated a significant step forward in the development of graphene-based memristors and unlocking their potential for use ...