Abstract: Currently, faults suffered by SRAM memory systems have increased due to the aggressive CMOS integration density. Thus, the probability of occurrence of single-cell upsets (SCUs) or ...

When multiple SETs are considered, simulation results show a 380times increase in cross-section with a four-bit carry look-ahead generator, and a 27times increase with a four-bit arithmetic logic unit ...

Nearly five months into Trump’s new reign of error, his administration’s mistakes are multiplying.