NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

DIMMs, bits, and cosmic rays. The basic building block of DRAM (dynamic random access memory) is a storage cell. Each cell comprises a capacitor and a transistor and stores a single bit of data.

Row hammer, which happens when there is leakage between adjacent memory cells, has become a challenging problem due to the increase in DRAM cell density [2]. Due to these issues, many DRAM ...