Another critical issue cited by the crowd was pattern roughness. DSA is known to suffer from higher levels of line-edge/line-width roughness ... “Defect mitigation and root cause studies in 14 nm half ...

World's first 300mm-fab compatible directed self-assembly process line Feb 10, 2012 Researchers advance design-dependent process monitoring for semiconductor wafer manufacturing ...

E. Dehaerne, et al., “YOLOv8 for Defect Inspection of Hexagonal Directed Self-Assembly Patterns: A Data-Centric Approach,” 38th EMLC Conference (2023), arXiv:2307.15516 Tags: 2D materials Brewer ...

Stanford researchers sponsored by SRC have successfully created contact hole patterns for a wide variety of practical logic and ... See Promise for 14 Nanometer Design with Directed Self-Assembly.

Directed Self Assembly is an emerging technology, that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have ...

A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.

Imec is getting closer to implementing DSA (directed self-assembly) for via patterning at the N7 technology node and beyond. DSA processes with cylinder-forming block copolymers (BCP) have gained ...

Imec has demonstrated the capability of directed self-assembly (DSA) to pattern line/spaces with a pitch as small as 18nm, using a high-chi block copolymer (high-χ BCP) based process under high volume ...

IMEC installed the world’s first manufacturing line able to use self-assembly in its pilot fab in 2012. Work there has focused on reducing errors in self-assembled structures through improved ...

A new interface control technique for block co-polymer self-assembly could provide long-sought method for making even tinier patterns on microchips with lines just 9 nanometers wide.