In this module, you will learn about the simplest semiconductor device, a Schottky diode, which consists of a metal-semiconductor junction. You will apply the drift-diffusion model, solving Gauss' law ...

Littelfuse, Inc. has introduced the low-capacitance SP3014 Series TVS Diode Array (SPA® Diodes), to provide protection for electronic equipment that may experience destructive electrostatic ...

With capacitance values as low as 50 pF and power ratings ranging from 600 to 3000 watts, these TVS diodes offer unparalleled protection for sensitive avionics data lines. View the video .

2nd course in the Semiconductor Devices SpecializationInstructor: Wounjhang Park, Ph.D., ProfessorThis course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts ...

These ultra-low capacitance TVS diodes are designed to meet the increasing ESD protection needs in today’s sensitive high-speed line and antenna-based applications. AOZ8S205. News.

The DF2B6M4BSL TVS diode features a total capacitance of just 0.12pF (0.15pF max.), which is the lowest for any such Toshiba device, representing an (approximate) 25% reduction in capacitance when ...

The kneevoltage of the LED is 2.45V, and the signalgenerator has an internal resistance of50Ω. An inductance of 100 μH and the50-pF capacitance of a typical LED yielda Q of 28. The amplitude of the ...

Toshiba launched low-capacitance TVS diodes for use in high-speed interfaces in mobile devices that deliver the industry's leading-class protection pe.

KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ DF2B6M4BSL,” an ultra-low capacitance TVS diode for high-frequency antennas. The diode protects ...

Additional features that boost the protection capabilities of AOZ8S205BLS TVS diodes include lower insertion loss, reverse working voltages (VRWM) of 3.3V, 5V, and 24V, and accurate clamping voltage.